Breakthroughs may lead to more energy efficient transistors
from Energy Harvesting Journal
Researchers at Penn State and the University of Notre Dame have announced breakthroughs in the development of tunneling field effect transistors (TFETs), a semiconductor technology that takes advantage of the quirky behavior of electrons at the quantum level. Transistors are the building blocks of the electronic devices that power the digital world, and much of the growth in computing power over the past 40 years has been made possible by increases in the number of transistors that can be packed onto silicon chips. But that growth, if left to current technology, may soon be coming to an end.
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