Researchers Demonstrate New Way to Control Nonvolatile Magnetic Memory Devices
from R&D Magazine
Cornell University researchers have demonstrated a new strategy for making energy-efficient, reliable nonvolatile magnetic memory devices—which retain information without electric power. Reported online in
, the researchers use a physical phenomenon called the spin Hall effect, that turns out to be useful for memory applications because it can switch magnetic poles back and forth—the basic mechanism needed to make magnet-based computer memory.
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