Flexible graphene transistor sets new records
from Physics World
Dr. Deji Akinwande
, and his research team at the University of Texas at Austin have made state-of-the-art flexible graphene field-effect transistors with record current densities and the highest power and conversion gain ever. The transistors also show near-symmetric electron and hole transport, are the most mechanically robust flexible graphene devices fabricated to date, and can be immersed in a liquid without any ill effects. To make the devices the team used microlithography atop a plastic substrate. The plastic substrate can easily be patterned with metallic gates to make complex transistors. The graphene itself was made by chemical vapor deposition and was passivated with silicon nitride. Potential applications include flexible smartphones, displays, fabric and even smart walls. But they could also be basic science tools to help understand heat transport as well as the dependencies of spatial and mechanical features on Dirac cones in graphene. A
describing this work is available, and a full paper will appear in Applied Physics Letters.
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